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＜p＞＜strong＞Kinetic Studies in GeO2/Ge System: A Retrospective from 2021＜/strong＞ investigates reaction kinetics in GeO2/Ge systems, aiming to demonstrate the fundamentals of the GeO2/Ge interface and to give insight into the distinctive features and performance of Ge (germanium) applied to advanced complementary metal oxide semiconductor (CMOS) devices.＜/p＞ ＜p＞This book first reviews the development of MOS technology and discusses the potentials of emerging Ge and the challenges facing it as a contentious channel material, once promising to replace Si (silicon) for advanced nodes. The study systematically analyzes the following aspects of GeO2/Ge stacks that will shed light on the characteristics and reaction principles of the system: GeO2/Ge degradation, Ge passivation techniques, desorption kinetics of GeO from GeO2/Ge, the relationship between GeO2 crystallization and GeO2/Ge interface reaction, and the oxidation kinetics of Ge. Based on findings from the intrinsic properties of GeO2/Ge, the author also compares it with prevalent SiO2/Si systems and demonstrates the essential differences between the two, contributing to quality control, process optimization, and technology advancements of GeO2/Ge.＜/p＞ ＜p＞The book will be a useful reference for researchers, professionals, and students interested in electronic materials, condenser matter physics, microelectronic engineering, and semiconductors.＜/p＞画面が切り替わりますので、しばらくお待ち下さい。

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